We demonstrate that individual ferrite nanocrystals used as etching masks are easily transferred on HOPG (High Oriented Pyrolitic Graphite) with a high resolution whereas silicon (SiO2/Si) substrate is too robust compared to the mask to permit the best transfer. There are various procedures for transferring individual ferrite nanocrystals to obtain similar nanostructures with different surfaces. Under the best experimental conditions, the smallest spacing is equal to or less than 3 nm. This distance has, to our knowledge, never been reported in the literature.
Source : Motif Transfer: Down to 3 nm in Resolution Using Individual Nanocrystals. D. Ingert and M-P Pileni Adv. Mat., 2008, 20, 4334-4342.